| 摘要 |
Some of the members constituting a semiconductor element are formed from alpha-Si and an HSG forming process is implemented to form hemispherical polysilicon grains at some of the members formed from alpha-Si. Thus, a semiconductor device that is achieved without requiring a great number of manufacturing steps such as film formation and etching, facilitates control of the individual steps and assures reliable electrical connection between the members and a method of manufacturing such a semiconductor device are provided.
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