发明名称 |
Programmable resistance memory element and method for making same |
摘要 |
A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.
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申请公布号 |
US2003122156(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020308399 |
申请日期 |
2002.12.02 |
申请人 |
MAIMON JON |
发明人 |
MAIMON JON |
分类号 |
G11C11/56;H01L;H01L21/00;H01L21/06;H01L21/20;H01L21/82;H01L21/8234;H01L21/8244;H01L29/00;H01L45/00;H01L47/00;(IPC1-7):H01L31/032 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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