发明名称 |
Solid-state image capturing device and imaging apparatus using the same |
摘要 |
An n-type semiconductor substrate 11 has a p-type well 12 in which are formed a charge transfer channel 13, a flowing diffusion region 14 made of an n-type impurity region, an n-type buried region 16 and a reset drain region 15. Transfer gates 51 and 52 of a horizontal CCD and an output gate 41 are formed on the surface of the charge transfer channel 13, with an insulation film 20 interposed; reset electrodes 31 and 32 are formed on the surface of the buried region 16, again with the insulation film 20 interposed. The floating diffusion region 14 is connected to a source follower circuit 6. The reset electrodes 31 and 32 are provided adjacent to each other in the channel direction of a reset gate section 3 and can be driven independently of each other.
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申请公布号 |
US2003122948(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020329780 |
申请日期 |
2002.12.27 |
申请人 |
UYA SHINJI;KIM YONG GWAN;SAKAMOTO TOMOHIRO |
发明人 |
UYA SHINJI;KIM YONG GWAN;SAKAMOTO TOMOHIRO |
分类号 |
H01L27/148;H04N5/335;H04N5/355;H04N5/357;H04N5/372;(IPC1-7):H04N3/14 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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