发明名称 |
Method for forming metal lines of semiconductor device |
摘要 |
After first metal lines and a first inter-metal dielectric are formed on a semiconductor substrate, top surfaces thereof are planarized to construct a flat plane. Then, second metal lines each being vertically aligned with a corresponding first metal line are formed on the flat plane, so that integral metal lines of a high aspect ratio are constructed. Gaps formed by the second metal lines are filled with a second inter-metal dielectric, which is joined with the first inter-metal dielectric to construct an integral inter-metal dielectric. |
申请公布号 |
US2003124860(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020327858 |
申请日期 |
2002.12.26 |
申请人 |
LEE JAE SUK;LEE YOUNG SUNG |
发明人 |
LEE JAE SUK;LEE YOUNG SUNG |
分类号 |
B24B37/00;H01L21/28;H01L21/304;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L21/320 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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