发明名称 HIGH-HEAT CONDUCTIVITY Si-CONTAINING MATERIAL AND ITS MANUFACTURING METHOD
摘要 <p>A high-heat conductivity Si-containing material containing an Si phase the lattice constant of which is so controlled as to be over 0.54302 nm and below 0.54311 nm at room temperatures. A ceramic material not containing a B-containing compound is baked. Degradation of heat conductivity can be prevented, and a high-heat conductivity can be stably exhibited.</p>
申请公布号 WO2003053880(P1) 申请公布日期 2003.07.03
申请号 JP2002013273 申请日期 2002.12.19
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