| 摘要 |
The invention relates to a method and device for depositing several crystalline semiconductor layers on at least one semiconductor crystalline substrate. According to said method, gaseous parent substances are introduced into a process chamber (2) of a reactor (1) by means of a gas inlet organ (7), said substances accumulating, optionally after a chemical gas phase and/or surface reaction, on the surface of a semiconductor substrate that is placed on a substrate holder (5) in the process chamber (5), thus forming the semiconductor layer. Said semiconductor layer and the semiconductor substrate form a crystal consisting of either one or several elements from main group V, elements from main groups III and V, or elements from main groups II and VI. In a first process step for depositing a first semiconductor layer, a first process gas consisting of one or several first parent substances is introduced into the process chamber (2), the decomposition products of said gas forming the crystal of a first semiconductor layer and small quantities of a second parent substance can be introduced into the process chamber (2) in order to dope the first semiconductor layer. The invention is characterised in that in a second process step, prior to or after the first process step, a second process gas, which contains the second parent substance and optionally additional gases, is introduced into said process chamber (2) in order to deposit a second semiconductor layer, the decomposition products of said gas forming a second semiconductor layer, having a crystal that differs from that of the first semiconductor layer, whereby small quantities of a first parent substance can be introduced into the process chamber in order to dope the second semiconductor layer.
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