发明名称 |
Gallium nitride based semiconductor laser and image exposure device |
摘要 |
In order to obtain a visually high quality image with excellent sharpness using a silver halide photosensitive material, it is necessary to reduce the ratio of EL light in the light output from a GaN based laser diode to 20% or less. For example, when the light intensity measured on a sheet of photosensitive paper is 0.05 mW, the thickness of a waveguide is 3 nm and the width of the waveguide is 3 mum, this condition is satisfied with a length of a resonator being 1 mm or less. In other words, a waveguide width W1 and a resonator length L are set such that the product of the waveguide width W1 and the resonator length L (W1.L) becomes 0.003 mm2 or less. This reduces the output ratio of the EL light, and a high quality image with excellent sharpness can be obtained when a silver halide photosensitive material is exposed.
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申请公布号 |
US2003123503(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020329511 |
申请日期 |
2002.12.27 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
MATSUMOTO KENJI;HAYAKAWA TOSHIRO |
分类号 |
G03C5/08;B41J2/45;H01S5/10;H01S5/22;H01S5/323;H01S5/343;(IPC1-7):H01S5/00;B41J2/435;B41J2/47 |
主分类号 |
G03C5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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