| 摘要 |
A non-volatile semiconductor memory device in which one I/O line is provided corresponding to one block region. 2N (four, for example) memory cells are provided in one block region. The adjacent memory cells are connected by a connect line. A bit line is connected to each connect line. Four bit lines are provided in one block region. The four bit lines in one block region are commonly connected to the I/O line through first select gates. A second select gate is provided between the bit line which is located at the boundary between the i-th and (i+1)th block regions which are adjacent to each other in a row direction and the I/O line corresponding to the i-th block region.
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