发明名称 |
Nonvolatile semiconductor memory device and method for fabricating the same |
摘要 |
A nonvolatile semiconductor memory device according to the present invention has a control gate electrode which is formed on the upper stage of a stepped portion formed in the principal surface of a substrate with a first insulating film interposed therebetween and a floating gate electrode which is formed to cover up the stepped portion, capacitively coupled to the side surface of the control gate electrode closer to the stepped portion with a second insulating film interposed therebetween, and opposed to the lower stage of the stepped portion with a third insulating film serving as a tunnel film interposed therebetween. Within the semiconductor substrate and in the vicinity of the stepped portion, there is formed a depletion control layer which is composed of a heavily doped impurity region and formed to extend from a position located under the floating gate electrode and at a distance from the upper corner of the stepped portion toward the lower corner of the stepped portion and adjoin the end portion of a drain region without reaching a step side region.
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申请公布号 |
US2003122180(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20030366420 |
申请日期 |
2003.02.14 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SUGIYAMA NOBUYO;FUJIMOTO HIROMASA;ODANAKA SHINJI;OGURA SEIKI |
分类号 |
H01L27/115;H01L21/28;H01L21/336;H01L21/8247;H01L29/423;H01L29/788;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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