发明名称 Asymmetric distributed Bragg reflector for vertical cavity surface emitting lasers
摘要 An asymmetric distributed Bragg reflector (DBR) suitable for use in vertical cavity surface emitting lasers. The asymmetric DBR is comprised of stacked material layers having different indexes of refraction that are joined using asymmetrical transition regions in which the transition steps within a transition region have different material compositions, different doping levels, and different layer thicknesses. Adjacent transition regions have different transition steps. Thinner transition regions are relatively highly doped and are located where the optical standing wave within the DBR has a low field strength. Thicker transition regions are relatively lightly doped and are located where the optical standing wave has a relatively high field strength. Beneficially, in the AlXGa(1-X)As material system the stacked material layers are alternating layers of AlAs and GaAs. Other material systems will use other alternating layers.
申请公布号 US2003123513(A1) 申请公布日期 2003.07.03
申请号 US20010028435 申请日期 2001.12.28
申请人 VILLAREAL SAMUEL S.;JOHNSON RALPH H. 发明人 VILLAREAL SAMUEL S.;JOHNSON RALPH H.
分类号 H01S5/183;H01S5/30;(IPC1-7):H01S5/00;H01S3/08 主分类号 H01S5/183
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