| 发明名称 |
Process of final passivation of an integrated circuit device |
| 摘要 |
A process for forming a final passivation layer over an integrated circuit comprises a step of forming, over a surface of the integrated circuit, a protective film by means of High-Density Plasma Chemical Vapor Deposition. |
| 申请公布号 |
US2003122221(A1) |
申请公布日期 |
2003.07.03 |
| 申请号 |
US20020323961 |
申请日期 |
2002.12.18 |
| 申请人 |
STMICROELECTRONICS S.R.I. |
发明人 |
DE SANTI GIORGIO;ZANOTTI LUCA |
| 分类号 |
H01L21/314;H01L21/316;H01L21/318;H01L23/31;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/314 |
| 代理机构 |
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代理人 |
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