HIGH PRESSURE WAFER-LESS AUTO CLEAN FOR ETCH APPLICATIONS
摘要
A method for cleaning a processing chamber is provided. The method initiates with introducing a fluorine containing gaseous mixture into a processing chamber. Then, a plasma is created from the fluorine containing gaseous mixture in the processing chamber. Next, a chamber pressure is established that corresponds to a threshold ion energy in which ions of the plasma clean inner surfaces of the processing chamber without leaving a residue. A method for substantially eliminating residual aluminum fluoride particles deposited by an in-situ cleaning process for a semiconductor processing chamber and a plasma processing system for executing an in-situ cleaning process are also provided.
申请公布号
WO02091453(A9)
申请公布日期
2003.07.03
申请号
WO2002US14102
申请日期
2002.05.03
申请人
LAM RESEARCH CORPORATION;SINGH, HARMEET;DAUGHERTY, JOHN, E.;ULLAL, SAURABH, J.
发明人
SINGH, HARMEET;DAUGHERTY, JOHN, E.;ULLAL, SAURABH, J.