发明名称 RESIST MATERIAL AND EXPOSURE METHOD
摘要 <P>PROBLEM TO BE SOLVED: To enable an ultra-microfabrication exceeding the conventional techniques by using a polymeric material having low absorption in the wavelength region of vacuum ultraviolet radiation (VUV). <P>SOLUTION: In an exposure method in which a resist layer is selectively exposed with UV and patterned in a prescribed shape, a polymeric material having an introduced adamantane group in which two or more hydrogen atoms have been replaced with at least one selected from a fluorine atom, a trifluoromethyl group and a difluoromethylene group is used as a polymeric material forming the resist layer. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003186197(A) 申请公布日期 2003.07.03
申请号 JP20010385901 申请日期 2001.12.19
申请人 SONY CORP 发明人 MATSUZAWA NOBUYUKI
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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