发明名称 |
Semiconductor memory device using tunneling magnetoresistive elements |
摘要 |
Disclosed is a semiconductor memory device which uses tunneling magnetoresistive element as memory cells and eliminates the temperature dependencies in a write margin and read margin in such a way as to be able to accurately output a write current at the time of writing the memory cells. The semiconductor memory device is constructed in such a way that main bit lines or main word lines are laid out so as to cross bit lines or word lines perpendicularly, and a main bit line selector or a main word line selector which respectively selects the main bit line or the main word line is arranged outside a memory cell array.
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申请公布号 |
US2003123199(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020329463 |
申请日期 |
2002.12.27 |
申请人 |
NEC CORPORATION |
发明人 |
HONDA TAKESHI;SAKIMURA NOBORU;SUGIBAYASHI TADAHIKO |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00;G11B5/127 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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