| 摘要 |
PURPOSE: A method for manufacturing a poly silicon TFT(Thin Film Transistor) is provided to be capable of simplifying manufacturing processes by forming an off-set region without using an additional mask process and replacing a gate protecting layer with a gate isolating layer without deposition of a protecting layer. CONSTITUTION: After depositing a poly silicon layer on an insulating substrate(11), a poly silicon active region(12) is formed by selectively etching the poly silicon layer. A source/drain region(12a) are formed on the poly silicon active region by implanting doped dopants. A source/drain electrode(13) made of conductive material, are formed on the resultant structure. After forming a gate isolating and protecting layer(14) on the resultant structure, a gate electrode(16) is formed on the gate isolating and protecting layer. Preferably, the width(a,b) of an off-set region is decided by that of the gate electrode.
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