发明名称 |
RECEIVING OPTICS AND PHOTOSEMICONDUCTOR DEVICE HAVING THE SAME |
摘要 |
A light-receiving element has a photodiode formed in part of the top surface of a semiconductor substrate so as to function as a light-receiving region, and has a light-emitting element mount electrode formed on top of the semiconductor substrate where the light-receiving region is not formed. A high concentration impurity layer is formed below the top surface of the semiconductor substrate along the peripheral edges of the light-emitting element mount electrode. This helps prevent the voltage applied to the light-emitting element mount electrode from influencing the output of the light-receiving element. Alternatively, a photonic semiconductor device has a light-emitting element and a light-receiving element, and has the light-receiving region of the light-receiving element formed parallel to the direction in which the light-emitting element emits light. The light-emitting element is arranged so that, when viewed in a plan view, the light-emitting point thereof overlaps with at least part of the light-receiving region. This permits easy fitting of the light-emitting element even with a low light-emitting point, and thus helps reduce variation in light reception sensitivity. <IMAGE> |
申请公布号 |
EP1324396(A1) |
申请公布日期 |
2003.07.02 |
申请号 |
EP20010972551 |
申请日期 |
2001.09.27 |
申请人 |
SANYO ELECTRIC CO., LTD.;TOTTORI SANYO ELECTRIC CO., LTD. |
发明人 |
NISHIMURA, SUSUMU;HONDA, SHOJI;UEYAMA, KOJI |
分类号 |
H01L31/103;G11B7/12;H01L25/16;H01L31/12;H01L31/173;H01L33/00;H01S5/022;H01S5/026 |
主分类号 |
H01L31/103 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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