| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of obtaining low resistance and good thermal stability by increasing the area of a salicide formation region of a gate. CONSTITUTION: Gate electrodes(23a,23b) are formed on a semiconductor substrate(21). A lightly doped drain region(24) is formed in the substrate located between the gate electrodes. The first and second insulating layer are sequentially formed in order to expose the upper surface and top sides of the gate electrodes. A gate ion-implantation is performed to the exposed gate electrodes(23a,23b). By patterning the first and second insulating layer using a sidewall mask layer, the first and second gate spacer(31,29) are formed at both sidewalls of the gate electrodes. After forming a source/drain region(30) in the substrate, a salicide layer(32) is formed on the exposed substrate and the surface and top sides of the gate electrodes.
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