METHOD FOR FORMING CAPACITOR

摘要

PURPOSE: A method for forming a capacitor is provided to improve the capacitance of a capacitor by increasing the surface area of a storage node. CONSTITUTION: An interlayer dielectric including the first opening is formed on a substrate(100) including a source/drain(112,114) and a gate(106). The first opening is buried by forming a storage node contact plug(118a) and a bit line contact plug(118b) thereon. A mask including the second opening is formed on the interlayer dielectric in order to cover the storage node contact plug and expose the bit line contact plug. A bit line(124) is formed thereon in order to fill the second opening. The mask is removed therefrom. A conductive layer is formed on the interlayer dielectric. A storage node(131) is formed by etching selectively the conductive layer. A dielectric layer(136) and a plate electrode(138) are formed on the storage node.