X-RAY DETECTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: An X-ray detector and a method for manufacturing the same are provided to be capable of reducing the line short due to chemical attack and improving the yield of fabrication by forming a gate isolating layer made of SiNx, the first and second storage node made of IZO. CONSTITUTION: After forming a gate line(201) and pads(202,203) on an insulating substrate(200), a gate isolating layer(204a) made of SiNx and an etch stop layer(208) are sequentially formed on the resultant structure. An ohmic contact layer(210) is formed on the upper portion of the gate isolating layer for enclosing the etch stop layer. A plurality of pad contact holes are formed by selectively etching the gate isolating layer for exposing the pads. A data line(214) having a source/drain(214a,214b) is formed on the ohmic contact layer and a common electrode(215) is simultaneously formed on the predetermined portion of the gate isolating layer. After forming the first storage node(216) on the common electrode, a protecting layer(218) is formed on the entire surface of the resultant structure. A contact hole(220) is formed by selectively etching the protecting layer for exposing the predetermined portion of the data line. The second storage node(224) is then formed on the protecting layer for electrically connecting with the data line through the contact hole. Preferably, the first and second storage node are made of IZO.