| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to simplify manufacturing processes, and to reduce parasitic capacitance by depositing an insulating layer using selective LPD(Liquid Phase Deposition) processing. CONSTITUTION: The first metal line(3) is formed on a lower layer(1) by using single damascene processing. A nitride layer(4b) is formed on the resultant structure. After forming the first insulating layer(5) on the nitride layer, a via hole is formed by selectively etching the first insulating layer. The second insulating layer(9) having a trench is formed on the first insulating layer. The nitride layer(4b) formed at the lower portion of the via hole is then removed. The second metal line(10) is formed to connect the first metal line(3).
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