METHOD FOR FABRICATING TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a transistor of a semiconductor device is provided to simplify fabrication processes by reducing the number of mask processes in an LDD(Lightly Doped Drain) forming process. CONSTITUTION: A pad oxide layer and a pad nitride layer are formed on a silicon substrate(11). A mask pattern is formed thereon in order to form a gate pattern. The pad nitride layer is etched by the mask pattern. A threshold voltage is controlled by performing a channel implantation process. The exposed pad oxide layer is removed by a cleaning process. A gate oxide layer(15) is formed on the resultant. A gate poly is deposited thereon. The gate poly is planarized by a CMP(Chemical Mechanical Polishing) process. The gate oxide layer, the pad nitride layer, and the pad oxide layer are removed therefrom. Lightly doped ions are implanted on an upper portion of the resultant. Highly doped ions are implanted thereon. An oxide layer is formed on the resultant. The remaining oxide layer(19) is formed at a lower portion of a gate sidewall. A salicide layer(20) is formed on the resultant.