METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to reduce largely a contact resistance between a line plug and a metal line in a post-process by widening an exposed part of the line plug. CONSTITUTION: An insulating layer(2) is formed on a lower metal line(1). A contact hole is formed thereon. The inside of the contact hole is filled with the first conductive material(4) by depositing the first conductive material on the resultant. A line plug is formed by etching the first conductive material. A side portion of the first conductive material is partially exposed by etching the insulating layer under a condition of high etching selectivity of the first conductive material and the insulating layer. An upper metal line(5) is formed by depositing the second conductive material on the resultant.