METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to remove a contact resistance by connecting a lower line to an upper line without a contact hole. CONSTITUTION: The first interlayer dielectric(101) is formed on a semiconductor substrate(100). The first metal layer is formed on the first interlayer dielectric. The first mask pattern is selectively formed on the first metal layer. The first metal pattern having a pole is formed by etching selectively the first metal layer. The second interlayer dielectric(104) is formed on the resultant. The second metal layer is formed on the resultant. The second mask pattern is formed thereon. The second metal layer is selectively etched by using the second mask pattern. The second mask pattern is formed by etching selectively the second metal layer.