发明名称 |
Scanning depletion microscopy for carrier profiling |
摘要 |
In an imaging system for carrier profiling of a device structure, a doped semiconductor tip is utilized as an active dynamic sensing element for successively probing spaced-apart portions of the structure. At each probe position, the bias voltage applied between the tip and the structure is varied. While the bias voltage is being varied, a measurement is taken of the change in capacitance that occurs between the tip and the structure. These measurements provide an accurate high-resolution high-contrast image that is representative of the carrier profile of the probed portions of the device structure. |
申请公布号 |
EP1003026(A3) |
申请公布日期 |
2003.07.02 |
申请号 |
EP19990308906 |
申请日期 |
1999.11.09 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
KLEIMAN, RAFAEL NATHAN;O'MALLEY, MEGAN LORRAINE;TIMP, GREGORY L. |
分类号 |
H01L29/78;G01N27/24;G01Q30/20;G01Q60/30;G01Q60/40;G01Q70/08;G01R31/312;H01L21/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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