| 摘要 |
There is disclosed a double side connected type semiconductor apparatus comprising pads for external connection on both sides, semiconductor devices formed on both sides of a semiconductor substrate, and conductor portions which perform electrical connection between the pads and between the pads and the semiconductor devices, wherein the semiconductor devices are formed on both the sides of the semiconductor substrate in accordance with a selective impurity diffusing method; the conductor portions are formed in such a manner that impurities are diffused only in required parts on both the sides of the semiconductor substrate in accordance with the selective impurity diffusing method, so that a resistivity of the diffused part of the semiconductor substrate lowers, which enables electric conduction; and the conductor portions are electrically insulated from the semiconductor devices by isolations. |
