| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of improving capacitance and simplifying manufacturing processes. CONSTITUTION: A semiconductor substrate having bit lines and word lines is prepared. A lower electrode(100) is formed on the semiconductor substrate. A nitride layer(200) and a tungsten film are sequentially deposited on the lower electrode. A dielectric film(300) is formed by oxidation of the tungsten film. After performing annealing process of the resultant structure, an upper electrode(400) is then formed on the dielectric film(300).
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