METHOD FOR FORMING VIA HOLE

摘要

PURPOSE: A method for forming a via hole is provided to be capable of preventing the increase of top size of a via hole caused by trench etching in self-aligned dual damascene processing. CONSTITUTION: An inorganic insulating layer(206) and a barrier layer(211) are sequentially formed on a semiconductor substrate(200) having a conductive layer(202). A via hole(207) is formed by selectively etching the barrier layer and the inorganic insulating layer using the first photoresist pattern as a mask. After removing the first photoresist pattern, an organic insulating layer(214) is filled into the via hole. A trench(215) is formed by selectively etching the organic insulating layer(214) using the second photoresist pattern as a mask. The second photoresist pattern is then removed.