| 摘要 |
PURPOSE: An array substrate for a liquid crystal display device and a method for manufacturing the same are provided to prevent a leakage current by improving interface characteristics of an active layer and a first silicon nitride film of a thin film transistor, and obtain excellent step coverage due to an excellent deposition characteristic of the second silicon nitride film. CONSTITUTION: Gate electrodes(123) and gate lines(125) connected with data electrodes are formed on a substrate(100). A first insulating film(129), silicon insulating film is formed on a front surface of the substrate. An active layer and an ohmic contact layer are formed on the gate electrodes. Source and drain electrodes(141,143) are formed, contacting with the ohmic contact layer, and data lines(145) connected with the source electrodes. A first silicon nitride film(151a) is formed by increasing flux of ammonia gas than flux of silane gas in acting the ammonia gas and the silane gas on the front surface of the substrate. A second silicon nitride film(151b) is formed by increasing flux of silane gas than flux of ammonia gas in acting the ammonia gas and the silane gas on the first silicon nitride film. The first silicon nitride film and the second silicon nitride film are patterned to form drain contact holes exposing parts of the drain electrode. Transparent pixel electrodes(161) are formed to contact with the drain electrodes.
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