| 摘要 |
PROBLEM TO BE SOLVED: To realize a temperature pattern in a plane containing microscopic heating regions and cooling regions. SOLUTION: The temperature controlling apparatus 100 is provided with a semiconductor substrate 200, a heating means containing a plurality of impurity diffused region units 300 formed on one surface of the substrate 200 by the selective diffusion of impurities and a cooling part 400 to cool the substrate through the back surface of the substrate. The temperature-controlled object 10 contacting with the heating surface of the substrate 200 is selectively heated by heating the heating regions corresponding to the shape of the impurity diffused region units selectively energized among the plural impurity diffused region units 300 and cooled through the substrate 200 cooled by the cooling part 400 at regions other than the heating regions. COPYRIGHT: (C)2003,JPO
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