Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell

摘要

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell (M), and a write circuit (2 to 8) for writing data in the memory cell, the write circuit writing a data in the memory cells, the writing a data in the memory cell by supplying a write voltage (Vpgm) and a write control voltage (VBL) to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage (VBL) in response to the advent of a first write state of the memory cell, and inhibiting any operation of writing a data to the memory cell (M) by further changing the value of the write control voltage (VBL) to Vdd in response to the advent of a second write state of the memory cell.