METHOD FOR FORMING FUSE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fuse of a semiconductor device is provided to prevent the corrosion of the fuse in a fuse fabrication process using a damascene pattern. CONSTITUTION: The second insulating layer(12) is formed on the first insulating layer(11). A trench for the first metal line is formed by using the first mask pattern. The first metal line(14) is formed thereon by performing a CMP(Chemical Mechanical Polishing) process. The third insulating layer(15) is formed on the resultant. A trench for the second metal line is formed on the resultant by using the second mask pattern. The second metal line barrier layer(17) is formed on the trench for the second metal line. The second metal line(18) is formed by performing the CMP process. A buffer layer(19) is formed on the resultant. A passivation layer(20) is deposited thereon. The passivation layer is etched by using the third mask pattern.