METHOD FOR MANUFACTURING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact hole of a semiconductor device is provided to be capable of improving the yield of a photolithography process by removing scattered reflective light at a contact hole photoresist pattern by using a light absorbing layer and improving step coverage by forming the contact hole into a dual damascene structure. CONSTITUTION: After forming an interlayer dielectric(102) at the upper portion of a semiconductor substrate, a groove having a predetermined depth is formed in the interlayer dielectric. A light absorbing layer(108') is formed on the resultant structure. After forming a photoresist pattern(110) on the resultant structure, the groove is exposed by selectively removing the light absorbing layer by using the photoresist pattern as an etching mask. Then, a via hole(114) vertically connected with the groove, is formed by etching the interlayer dielectric by using the photoresist pattern as a mask. The photoresist pattern and the light absorbing layer are removed.