| 摘要 |
<p>PURPOSE: A CVD(Chemical Vapor Deposition) apparatus is provided to prevent the deposition of process gas on a bottom portion of a reaction chamber by using the pressure of purge gas. CONSTITUTION: A CVD apparatus includes a reaction chamber(10), a wafer support portion(50), a gas focus ring(70), a purge gas supply portion(90), a gas exhaust portion(80), and a pumping line(82). A stepped portion having a projected bottom portion is formed at the inside of the reaction chamber. The wafer support portion is installed in the reaction chamber. The gas focus ring is installed at a top portion of the stepped portion in order to inject a process gas to the center portion of an upper space of the wafer support portion. The purge gas supply portion is installed at a bottom of the reaction chamber in order to supply a purge gas to the inside of the reaction chamber. The gas exhaust portion is installed at an upper portion of the projected bottom portion in order to inject the process gas and the purge gas. The pumping line is used for connecting the gas exhaust portion to a vacuum pump.</p> |
