| 摘要 |
PURPOSE: A method for fabricating an LED is provided to improve the optical characteristic by using a MEMS(Micro Electro Mechanical System) method. CONSTITUTION: An N-type GaN layer(23) is formed on a lower portion of a sapphire substrate(21). An active layer(24) and a P-type GaN layer(25) are formed thereon. An LED chip is fabricated by forming N-type metal(27) on the N-GaN layer and P-type metal(26) on the P-GaN layer. A silicon sub mount is fabricated by using a MEMS method. A P-type electrode and an N-type electrode are formed on an inclined mirror. The LED chip is in contact with the silicon sub mount by a flip chip solder bumper. The P-type electrode and the N-type electrode are bonded to an anode terminal and a cathode terminal by using a wire bonding method. The bonded sub mount is sealed by an epoxy resin. |
