METHOD FOR FABRICATING TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a transistor of a semiconductor device is provided to reduce a fabrication cost by removing two mask processes and an N-channel and a P channel implantation process. CONSTITUTION: The first oxide layer, the first nitride layer, and the second oxide layer are deposited on a semiconductor substrate(1). A pattern is formed by using the first mask. The second prime oxide layer is formed by etching the second oxide layer. The first prime nitride layer is formed by etching the first nitride layer. A counter doping process is performed on the semiconductor substrate. The first prime insulating layer is formed by etching the first insulating layer. A gate insulating layer is formed on the semiconductor substrate. A gate conductive layer(13) is deposited on the gate insulating layer. A gate conductor is formed by performing a CMP(Chemical Mechanical Polishing) process. The second prime oxide layer and the first prime nitride layer are removed by performing a wet etch process. A spacer layer is deposited thereon. A spacer(15) is formed at both sides of the gate conductor by performing an etch-back process. A source/drain region is formed by implanting ions into the semiconductor substrate of the outside of the spacer. The first prime insulating layer is formed by etching the first insulating layer. A salicide is deposited on the resultant. A salicide layer(19) is deposited on the gate conductor and the source/drain region by performing an annealing process.