| 摘要 |
PURPOSE: A method for forming a transistor of a semiconductor device is provided to be capable of increasing effect channel length without forming a gate spacer. CONSTITUTION: A gate electrode(19) having a hard mask(21) is formed on a semiconductor substrate(11). A buffer insulating layer(23) is formed on the entire surface of the resultant structure. By sequentially tilt-implanting heavily doped dopants and lightly doped dopants into the semiconductor substrate(11) while rotating the semiconductor substrate, a transistor having an LDD(Lightly Doped Drain) structure is formed. At this time, the tilted angle is 0-30 degree.
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