METHOD FOR FORMING CONDUCTIVE PLUG

摘要

PURPOSE: A method for forming a conductive plug is provided to be capable of obtaining sufficient overlay margin with a contact hole by using damascene processing. CONSTITUTION: The first insulating layer(204) having the first contact hole(205) is formed on a semiconductor substrate(100). A barrier metal film(208) and the first conductive plug(211) are sequentially formed in the first contact hole. The second insulating layer(214) having the second contact hole(215) for exposing the first conductive plug(211), is formed on the resultant structure. The second conductive plug is then filled into the second contact hole.