发明名称 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL FOR DIGITAL X-RAY DETECTOR
摘要 PURPOSE: A method for manufacturing a TFT(Thin Film Transistor) array panel for a digital X-ray detector is provided to be capable of reducing the surface of a storage capacitor formation region and forming a common electrode using a metal electrode alone without using transparent electrode material. CONSTITUTION: After forming a gate electrode(101) on an insulating substrate(100), a gate isolating layer(102), a semiconductor layer(103), and an etch stop layer(104) are sequentially formed on the resultant structure. After forming an N+ semiconductor layer(105) on the etch stop layer, a source/drain electrode(106a) and a common line(106b) are simultaneously formed on the resultant structure. After forming the first protecting layer(107) on the resultant structure, the second protecting layer(109) is formed on the first protecting layer for exposing the predetermined portion of the first protecting layer and the source/drain electrode. Then, transparent material is formed on the resultant structure. Preferably, the transparent material is used as a pixel electrode(110a) and a charge collect electrode(110b).
申请公布号 KR20030053566(A) 申请公布日期 2003.07.02
申请号 KR20010083319 申请日期 2001.12.22
申请人 BOE HYDIS TECHNOLOGY CO., LTD. 发明人 LIM, SAM HO;SONG, YEONG JIN
分类号 H01L31/115;(IPC1-7):H01L31/115 主分类号 H01L31/115
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