发明名称 DEPOSITING METHOD OF CHAMBER
摘要 PURPOSE: A depositing method of a chamber is provided to remove alien substances from substrates by blowing and pumping nitrogen gas before depositing the substrates in a deposition chamber. CONSTITUTION: A plurality of substrates are loaded in a deposition chamber(S10). The substrates are heated(S12). A deposition film is formed on the substrates(S14). A gas diffuser blows nitrogen into the deposition chamber to float alien substances(14a). Nitrogen gas is pumped to exhaust the N2 gas with the floated alien substances from the deposition chamber(S14b). The deposition chamber before deposition is stabilized(S14c). A deposition film is formed by exciting plasma(14d). The loaded substrates are separated(S16).
申请公布号 KR20030054903(A) 申请公布日期 2003.07.02
申请号 KR20010085337 申请日期 2001.12.26
申请人 LG.PHILIPS LCD CO., LTD. 发明人 BAEK, YEONG HUN
分类号 G02F1/13;(IPC1-7):G02F1/13 主分类号 G02F1/13
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