| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to be capable of preventing a low permittivity layer made of SiO2 and HfSiOx from being generated between an HfO2 layer and an SiN layer by forming a double dielectric layer made of SiN/HfO2 on an HSG(Hemi-Spherical Grain) layer by using an ALD(Atomic Layer Deposition). CONSTITUTION: After sequentially depositing an interlayer dielectric(1) and an etch stop layer(2) on a semiconductor substrate, a contact hole is formed by selectively etching the resultant structure. Then, a plug(3) made of a doped polysilicon layer is formed in the contact hole. A storage node oxide pattern(4) is formed on the resultant structure. After forming a storage node made of an amorphous polysilicon layer on the resultant structure, an HSG layer(6) is formed on the storage node. After depositing a double dielectric layer(7) made of SiN/HfO2 on the HSG layer, a rapid heat treatment is carried out at the resultant structure. Then, an upper electrode(8) is formed on the entire surface of the resultant structure.
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