发明名称 |
STRUCTURE OF OVERLAY MARK AND METHOD FOR FORMING THE SAME |
摘要 |
PURPOSE: A structure of an overlay mark and a method for forming the same are provided to be capable of improving the profile of a resist pattern irrespective of the surface curvature of an interlayer dielectric. CONSTITUTION: A structure of an overlay mark comprises the first metal wiring(71) for surrounding the outmost peripheral of the overlay mark, the first resist pattern(74) arranged at center portion of the overlay mark, and the second metal wiring(72) located between the first metal wiring and the first resist pattern. The first metal wiring(71) has a bar shape or a frame shape. The overlay mark further includes the second resist pattern(73) formed between the first metal wiring(71) and the second metal wiring(72).
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申请公布号 |
KR20030054069(A) |
申请公布日期 |
2003.07.02 |
申请号 |
KR20010084165 |
申请日期 |
2001.12.24 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HONG IK;NAM, UNG DAE |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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