发明名称 STRUCTURE OF OVERLAY MARK AND METHOD FOR FORMING THE SAME
摘要 PURPOSE: A structure of an overlay mark and a method for forming the same are provided to be capable of improving the profile of a resist pattern irrespective of the surface curvature of an interlayer dielectric. CONSTITUTION: A structure of an overlay mark comprises the first metal wiring(71) for surrounding the outmost peripheral of the overlay mark, the first resist pattern(74) arranged at center portion of the overlay mark, and the second metal wiring(72) located between the first metal wiring and the first resist pattern. The first metal wiring(71) has a bar shape or a frame shape. The overlay mark further includes the second resist pattern(73) formed between the first metal wiring(71) and the second metal wiring(72).
申请公布号 KR20030054069(A) 申请公布日期 2003.07.02
申请号 KR20010084165 申请日期 2001.12.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, HONG IK;NAM, UNG DAE
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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