METHOD FOR FORMING BARRIER METAL FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a barrier metal film of a semiconductor device is provided to be capable of improving the barrier property by using tantalum and Cu-Rd alloy as the barrier metal film. CONSTITUTION: The first metal wiring(12) is formed on a semiconductor substrate(11). An insulating layer(13) and an interlayer dielectric(14) are sequentially formed on the resultant structure. A trench is formed by selectively etching the interlayer dielectric(14). A via hole is formed to expose the first metal wiring(12) by selectively etching the interlayer dielectric and the insulating layer. After forming a Ta film(17) and a Cu-Rd alloy(18) as a barrier metal on the trench and the via hole, the second metal wiring(20) is then formed on the barrier metal.