| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of preventing the generation of voids in a plug. CONSTITUTION: An insulating layer(33) having a contact hole is formed on a semiconductor substrate(31). A barrier layer(34) is formed on the contact hole. A metal film with no void is formed to deposit rapidly at the lower part of the contact hole by performing CVD(Chemical Vapor Deposition) processing having the temperature gradient with a relatively high temperature at the lower part of the contact hole compared to the upper part of the contact hole. By selectively removing the metal film located on the insulating layer(33), a plug(35a) is formed.
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