| 摘要 |
PURPOSE: A method for forming a diffusion barrier layer is provided to be capable of improving adhesive force with a conductive layer and restraining stress in thermal processing. CONSTITUTION: The first insulating layer(206) having a via hole(222) is formed on a semiconductor substrate(200) having a conductive layer(202). The second insulating layer(216) having an opening part(220) is formed on the first insulating layer. A titanium film(230), a nickel film and a copper film(236) are sequentially formed in the via hole and the opening part to connect the conductive layer(202). A Ni-Cu alloy(233) as a diffusion barrier layer is formed between the titanium film(230) and the copper film(236) by annealing.
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