METHOD FOR FORMING FLASH MEMORY CELL

摘要

PURPOSE: A method for forming a flash memory cell is provided to be capable of forming a dielectric film having uniform thickness on a floating gate. CONSTITUTION: A floating gate(204) made of a doped polysilicon layer is formed on a semiconductor substrate(200). By tilt-implanting of nitrogen or argon ions into the floating gate(204), the surface of the polysilicon layer is changed to amorphous silicon layer(206). Then, a dielectric film and a control gate are sequentially formed on the entire surface of the resultant structure. At the time, the tilt angle in the ion-implantation processing is about 45 degree.