| 摘要 |
PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to be capable of enhancing adhesive force at interface between an SOG(Spin On Glass) layer and an insulating layer, and improving yield and reliability. CONSTITUTION: A plurality of conductive patterns(12) are formed on a lower layer(11). The first insulating layer(13) is formed on the resultant structure. An SOG layer(14) as a planarization layer is coated on the first insulating layer and cured. By plasma treatment of the cured SOG layer, a hydrophobic bond is changed to a hydrophilic bond. Then, the second insulating layer(15) is formed on the SOG layer, thereby forming an interlayer dielectric including the first insulating layer, the SOG layer and the second insulating layer.
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