| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the channeling of a gate electrode. CONSTITUTION: A gate oxide layer(22) and a polysilicon layer(23) are sequentially formed on a semiconductor substrate(21). The surface of the polysilicon layer(23) is densified by implanting nitrogen ions into the polysilicon layer(23) and annealing. Then, phosphorous ions are implanted into the polysilicon layer(23). At the time, the annealing is performed by using furnace or RTP(Rapid Thermal Processing) apparatus.
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