METHOD FOR FABRICATING IMAGE SENSOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating an image sensor of a semiconductor device is provided to increase the area of a photo diode by forming simultaneously opening portions of a contact on an upper face and a side face of the photo diode in a contact forming process. CONSTITUTION: A photo diode layer(13) is formed on an upper portion of a semiconductor substrate(11) including a shallow trench isolation layer(12). A dielectric layer(14) of a predetermined thickness is formed on an upper portion of the resultant. A contact is formed by etching partially the dielectric layer and the shallow trench isolation layer. A metal material is deposited on the resultant. A metal layer(15) is formed by patterning the metal material. The metal layer is used for connecting electrically the upper and side edge portion of the photo diode layer to a poly gate.