| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing attacks of boron and improving GOI(Gate Oxide Integrity) property by an annealing process using B2H6 gas. CONSTITUTION: A gate oxide layer(33) and an amorphous silicon layer are sequentially formed on a semiconductor substrate(31). By annealing the amorphous silicon layer using B2H6 or BHCl3 gas, a boron heavily doped polysilicon layer(35) is formed on the gate oxide layer(33). A metal film is formed on the heavily doped polysilicon layer(35), thereby forming a stacked gate electrode.
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