METHOD FOR FORMING METAL INTERCONNECTION

摘要

PURPOSE: A method for forming a metal interconnection is provided to be capable of preventing stress, leakage current and parasitic capacitance of a bit line by forming an oxide spacer at both sidewalls of a word line and the bit line. CONSTITUTION: A metal interconnection(35) is formed on a semiconductor substrate(31). An oxide layer having the thickness of 50-800Å is formed on the resultant structure by chemical vapor deposition by using TEOS gas without using oxygen gas at the temperature of 550-700°C. By blanket etching of the oxide layer, an oxide spacer(37) is formed at both sidewalls of the metal interconnection.